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IDC08S60CE Schottky Diode

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Description

IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon T.

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Features

* Revolutionary semiconductor material Silicon Carbide
* Switching behavior benchmark
* No reverse recovery
* No temperature influence on the switching behavior
* No forward recovery www. DataSheet4U. net
* High surge current capability

Applications

* SMPS, PFC, snubber C A Chip Type IDC08S60CE VBR 600V IF 8A Die Size 1.658 x 1.52 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond

IDC08S60CE Distributors

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📌 All Tags

IDC08S60CE Schottky Diode Infineon Technologies
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