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IGW50N65F5 - IGBT

Infineon Technologies

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Datasheet Details

Part number	IGW50N65F5
Manufacturer	Infineon ↗ Technologies
File Size	1.78 MB
Description	IGBT
Datasheet	IGW50N65F5-InfineonTechnologies.pdf

IGW50N65F5 Product details

Features

High speed F5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low QG.
Ideal fit with SIC Schottky Diode in boost converters.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

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Published: Mar 4, 2015 |