* High speed F5 technology offering
* Best-in-Class efficiency in hard switching and resonant topologies
* 650V breakdown voltage
* Low QG
* Ideal fit with SIC Schottky Diode in boost converters
* Maximum junction temperature 175°C
* Qualified accordin
IGW50N65F5 Datasheet (1.78 MB)
IGW50N65F5
Infineon ↗ Technologies
1.78 MB
Igbt.
IGBT
High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology
IGW50N65F5
650V IGBT high speed switching series fifth generation
Data sheet
Industrial Power.
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