IGW50N65F5 Datasheet - Infineon Technologies

IGW50N65F5 IGBT

IGW50N65F5 Features

* High speed F5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* 650V breakdown voltage

* Low QG

* Ideal fit with SIC Schottky Diode in boost converters

* Maximum junction temperature 175°C

* Qualified accordin

Datasheet Details

IGW50N65F5

Infineon ↗ Technologies

1.78 MB

Igbt.

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