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IGW50N65H5A IGBT

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Description

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology IGW50N65H5A 650V IGBT High speed switching series fifth generation Data sheet Industrial Powe.

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Features

* High speed H5 technology offering
* Best-in-Class efficiency in hard switching and resonant topologies
* Plug and play replacement of previous generation IGBTs
* 650V breakdown voltage
* Low gate charge QG
* Maximum junction temperature 175°C
* Quali

Applications

* Battery charger
* DC/DC converter Package pin definition:
* Pin 1 - gate
* Pin 2 & backside - collector
* Pin 3 - emitter 12 3 G C E Key Performance and Package Parameters Type VCE IC VCEsat, Tvj=25°C IGW50N65H5A 650V 50A 1.66V Tvjmax 175°C Mar

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