IGW50N65H5A Datasheet - Infineon Technologies

IGW50N65H5A IGBT

IGW50N65H5A Features

* High speed H5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* Plug and play replacement of previous generation IGBTs

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Quali

Datasheet Details

IGW50N65H5A

Infineon ↗ Technologies

1.89 MB

Igbt.

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IGW50N65H5A IGW50N65H5A IGBT Infineon Technologies

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