IPB04CNE8NG Power-Transistor

Infineon Technologies

IPB04CNE8NG Description

www.DataSheet4U.com IPB04CNE8N G IPP04CNE8N G OptiMOS®2 Power-Transistor .

IPB04CNE8NG Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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Datasheet Details

Part number: IPB04CNE8NG
Manufacturer: Infineon ↗ Technologies
File Size: 463.12 KB
Datasheet: IPB04CNE8NG_InfineonTechnologies.pdf
Description: Power-Transistor

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Power-Transistor Infineon Technologies

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