IPB091N06NG - Power-Transistor
IPB091N06NG Features
* Low gate charge for fast switching applications
* N-channel enhancement - normal level
* 175 °C operating temperature
* Avalanche rated
* Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 9.1 80 V mΩ A Type IPP091N0
