Part number:
IPB091N06NG
Manufacturer:
Infineon ↗ Technologies
File Size:
481.13 KB
Description:
Power-transistor.
IPB091N06NG Datasheet (481.13 KB)
* Low gate charge for fast switching applications
* N-channel enhancement - normal level
* 175 °C operating temperature
* Avalanche rated
* Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 9.1 80 V mΩ A Type IPP091N0
IPB091N06NG Datasheet (481.13 KB)
IPB091N06NG
Infineon ↗ Technologies
481.13 KB
Power-transistor.
📁 Related Datasheet
IPB090N06N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPB090N06N3
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switch.
IPB090N06N3 - Power-Transistor
(Infineon)
Id\Q
IPB090N06N3 G IPP093N06N3 G
%&$ #™3 Power-Transistor
Features P6? ABH>3
A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P G3 5<<5>C71C5 3 81A75 .
IPB090N06N3G - Power-Transistor
(Infineon)
Id\Q
IPB090N06N3 G IPP093N06N3 G
%&$ #™3 Power-Transistor
Features P6? ABH>3
A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P G3 5<<5>C71C5 3 81A75 .
IPB093N04LG - Power-Transistor
(Infineon Technologies)
..
Type
IPB093N04L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC convert.
IPB096N03LG - Power-Transistor
(Infineon)
Je]R
%&$ #b %
IPB097N08N3 - Power-Transistor
(Infineon)
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<.
IPB097N08N3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB097N08N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB097N08N3G - Power-Transistor
(Infineon)
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<.
