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IPB090N06N3 Datasheet - INCHANGE

IPB090N06N3, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPB090N06N3 *.
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IPB090N06N3-INCHANGE.pdf

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Datasheet Details

Part number:

IPB090N06N3

Manufacturer:

INCHANGE

File Size:

200.62 KB

Description:

N-Channel MOSFET

Features

* With TO-263(D2PAK) packaging
* Ultra-fast body diode
* High speed switching
* Very low on-resistance
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation 71 Tj Operating Junction Temperature -55~17

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