Part number:
IPB09N03LA
Manufacturer:
Infineon ↗ Technologies AG
File Size:
347.28 KB
Description:
Optimos 2 power-transistor.
* Ideal for high-frequency dc/dc converters
* N-channel
* Logic level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* Superior thermal resistance
* 175 °C operating temperature
* dv /dt rated P-TO263
IPB09N03LA Datasheet (347.28 KB)
IPB09N03LA
Infineon ↗ Technologies AG
347.28 KB
Optimos 2 power-transistor.
📁 Related Datasheet
IPB09N03LAG - Power-Transistor
(Infineon Technologies)
..
IPB09N03LA G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo.
IPB090N06N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPB090N06N3
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switch.
IPB090N06N3 - Power-Transistor
(Infineon)
Id\Q
IPB090N06N3 G IPP093N06N3 G
%&$ #™3 Power-Transistor
Features P6? ABH>3
A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P G3 5<<5>C71C5 3 81A75 .
IPB090N06N3G - Power-Transistor
(Infineon)
Id\Q
IPB090N06N3 G IPP093N06N3 G
%&$ #™3 Power-Transistor
Features P6? ABH>3
A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P G3 5<<5>C71C5 3 81A75 .
IPB091N06NG - Power-Transistor
(Infineon Technologies)
..
IPB091N06N G
IPP091N06N G
OptiMOS® Power-Transistor
Features • Low gate charge for fast switching applications • N-channel enha.
IPB093N04LG - Power-Transistor
(Infineon Technologies)
..
Type
IPB093N04L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC convert.
IPB096N03LG - Power-Transistor
(Infineon)
Je]R
%&$ #b %
IPB097N08N3 - Power-Transistor
(Infineon)
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q H3 5<.