Datasheet Details
- Part number
- IPB036N12N3G
- Manufacturer
- Infineon ↗ Technologies AG
- File Size
- 266.72 KB
- Datasheet
- IPB036N12N3G_InfineonTechnologiesAG.pdf
- Description
- Power-Transistor
IPB036N12N3G Description
IPB036N12N3 G OptiMOS™3 Power-Transistor .
IPB036N12N3G Features
* Ideal for high frequency switching and DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified accordin
IPB036N12N3G Applications
* Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 120 3.6 180 V mΩ A
Type
IPB036N12N3 G
Package Marking
PG-TO263-7 036N12N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100
📁 Related Datasheet
📌 All Tags