IPB036N12N3G Power-Transistor

Infineon Technologies AG

Description

IPB036N12N3 G OptiMOS™3 Power-Transistor .

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Datasheet Specifications

Part number: IPB036N12N3G
Manufacturer: Infineon ↗ Technologies AG
File Size: 266.72 KB
Datasheet: IPB036N12N3G_InfineonTechnologiesAG.pdf
Description: Power-Transistor

Features

* Ideal for high frequency switching and DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified accordin

Applications

* Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 120 3.6 180 V mΩ A Type IPB036N12N3 G Package Marking PG-TO263-7 036N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100

IPB036N12N3G Distributors

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IPB036N12N3G Power-Transistor Infineon Technologies AG

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