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IPB038N12N3G Datasheet - Infineon Technologies AG

IPB038N12N3G, Power-Transistor

IPP041N12N3 G OptiMOSTM3 Power-Transistor .
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Datasheet Details

Part number:

IPB038N12N3G

Manufacturer:

Infineon ↗ Technologies AG

File Size:

873.00 KB

Description:

Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant, halogen free
* Qualified

IPB038N12N3G Distributors

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