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IPB038N12N3G - Power-Transistor

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Infineon Technologies AG

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IPB038N12N3G Power-Transistor by Infineon Technologies AG - Datasheet Preview — Datasheet preview – IPB038N12N3G

Datasheet Details

Part number	IPB038N12N3G
Manufacturer	Infineon Technologies AG
File Size	873.00 KB
Description	Power-Transistor
Datasheet	IPB038N12N3G Datasheet
Additional preview pages of the IPB038N12N3G datasheet.

Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant, halogen free.
Qualified according to JEDEC1) for target.

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Published: Feb 17, 2011 |