IPB038N12N3G Datasheet, Power-transistor, Infineon Technologies AG

IPB038N12N3G Features

• Power-transistor
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID
<

PDF File Details

Part number:

IPB038N12N3G

Manufacturer:

Infineon ↗ Technologies AG

File Size:

873.00kb

Download:

📄 Datasheet

Description:

Power-transistor.

TAGS

IPB038N12N3G

Infineon Technologies AG

📁 Related Datasheet

IPB038N12N3 - Power Transistor (Infineon)
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPB038N12N3G - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB038N12N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.

IPB031N08N5 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB031N08N5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB031N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPB031N08N5 Data Sheet Rev. 2.0 Final Power Manage.

IPB031NE7N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IPB031NE7N3 - Power Transistor (Infineon)
OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • .

IPB031NE7N3G - Power-Transistor (Infineon Technologies AG)
IPB031NE7N3 G OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/D.

IPB033N10N5LF - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB033N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.

IPB034N03L - Power-Transistor (Infineon)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDE.

IPB034N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.