IPB039N10N3G Power-Transistor

Infineon Technologies AG

Description

IPB039N10N3 G OptiMOS™3 Power-Transistor .

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Datasheet Specifications

Part number: IPB039N10N3G
Manufacturer: Infineon ↗ Technologies AG
File Size: 291.30 KB
Datasheet: IPB039N10N3G_InfineonTechnologiesAG.pdf
Description: Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* High current capability
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for ta

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IPB039N10N3G Power-Transistor Infineon Technologies AG

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