INCHANGE manufacturer logo Part number: IPB033N10N5LF Manufacturer: INCHANGE File Size: 254.16kb Download: ð Datasheet Description: N-channel mosfet.
IPB031N08N5 - N-Channel MOSFET (INCHANGE) Isc N-Channel MOSFET Transistor IPB031N08N5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB031N08N5 - MOSFET (Infineon) MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPB031N08N5 Data Sheet Rev. 2.0 Final Power Manage.
IPB031NE7N3 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB031NE7N3 - Power Transistor (Infineon) OptiMOSTM3 Power-Transistor Features ⢠Optimized technology for synchronous rectification ⢠Ideal for high frequency switching and DC/DC converters ⢠.
IPB031NE7N3G - Power-Transistor (Infineon Technologies AG) IPB031NE7N3 G OptiMOSTM3 Power-Transistor Features ⢠Optimized technology for synchronous rectification ⢠Ideal for high frequency switching and DC/D.
IPB034N03L - Power-Transistor (Infineon) Type #$% &â¢3 Power-Transistor Features ⢠Fast switching MOSFET for SMPS ⢠Optimized technology for DC/DC converters ⢠Qualified according to JEDE.
IPB034N03L - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 80A@ TC=25â ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.
IPB034N03LG - OptiMOS3 Power-Transistor (Infineon Technologies AG) Type #$% &â¢3 Power-Transistor Features ⢠Fast switching MOSFET for SMPS ⢠Optimized technology for DC/DC converters ⢠Qualified according to JEDE.
IPB034N06L3 - Power-Transistor (Infineon) Jf]R %&$ #â¢3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J 7@C 4@? G6CE6CD R.
IPB034N06L3G - N-Channel MOSFET (INCHANGE) Isc N-Channel MOSFET Transistor IPB034N06L3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.