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IPB034N06N3 60V MOSFET

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Description

IPB034N06N3 G MOSFET OptiMOSª3 Power-Transistor, 60 V .

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Features

* for sync. rectification, motor-drives and dc/dc SMPS
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Halogen-free according

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 3.4 mΩ ID 100 A D²-PAK 7pin tab 1 7 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type / Ordering Code IPB034N06N3 G Package PG-TO263-7 Marking 034N06N Related Links - Final Data Sheet 1 Rev.

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