IPB034N03LG
Infineon ↗ Technologies AG
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Optimos3 power-transistor.
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IPB034N03L - Power-Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters • Qualified according to JEDE.
IPB034N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current :ID= 80A@ TC=25℃ ·Drain Source Voltage
: VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.
IPB034N06L3 - Power-Transistor
(Infineon)
Jf]R
%&$ #™3 Power-Transistor
Features
R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J 7@C 4@? G6CE6CD R.
IPB034N06L3G - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB034N06L3G
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.
IPB034N06L3G - Power Transistor
(Infineon)
Jf]R
%&$ #™3 Power-Transistor
Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J 7@C 4@? G6CE6CD R .
IPB031N08N5 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB031N08N5
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB031N08N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª5 Power-Transistor, 80 V IPB031N08N5
Data Sheet
Rev. 2.0 Final
Power Manage.
IPB031NE7N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB031NE7N3 - Power Transistor
(Infineon)
OptiMOSTM3 Power-Transistor
Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • .
IPB031NE7N3G - Power-Transistor
(Infineon Technologies AG)
IPB031NE7N3 G
OptiMOSTM3 Power-Transistor
Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/D.