Datasheet Details
- Part number
- IPB031NE7N3
- Manufacturer
- INCHANGE
- File Size
- 248.00 KB
- Datasheet
- IPB031NE7N3-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPB031NE7N3 Description
isc N-Channel MOSFET Transistor *.
IPB031NE7N3 Features
* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IPB031NE7N3
* AP
IPB031NE7N3 Applications
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous;Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20 100 400
PD
Total Dissipation
214
Tj
Operating
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