Datasheet Details
- Part number
- IPB038N12N3G
- Manufacturer
- INCHANGE
- File Size
- 254.43 KB
- Datasheet
- IPB038N12N3G-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPB038N12N3G Description
Isc N-Channel MOSFET Transistor IPB038N12N3G *.
IPB038N12N3G Features
* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPB038N12N3G Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
120
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20 120 480
PD
Total Dissipation @TC=25℃
300
Tch
Max. Operating Jun
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