IPB038N12N3G Datasheet - INCHANGE

IPB038N12N3G, N-Channel MOSFET

Isc N-Channel MOSFET Transistor IPB038N12N3G *.

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IPB038N12N3G-INCHANGE.pdf

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Datasheet Details

Part number:

IPB038N12N3G

Manufacturer:

INCHANGE

File Size:

254.43 KB

Description:

N-Channel MOSFET

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 120 480 PD Total Dissipation @TC=25℃ 300 Tch Max. Operating Jun

IPB038N12N3G Distributors

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IPB038N12N3G N-Channel MOSFET INCHANGE

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