IPB031N08N5 Datasheet - INCHANGE

IPB031N08N5, N-Channel MOSFET

Isc N-Channel MOSFET Transistor IPB031N08N5 *

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 120 116 480 PD Total Dissipation @TC=25℃ 167 Tch Max.
Operating

IPB031N08N5-INCHANGE.pdf