Description
IPB034N06N3 G MOSFET OptiMOSª3 Power-Transistor, 60 V .
Features
* for sync. rectification, motor-drives and dc/dc SMPS
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Halogen-free according
Applications
* Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
3.4
mΩ
ID
100
A
D²-PAK 7pin
tab 1
7
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type / Ordering Code IPB034N06N3 G
Package PG-TO263-7
Marking 034N06N
Related Links -
Final Data Sheet
1
Rev.
