IPB031NE7N3G Datasheet - Infineon Technologies AG

IPB031NE7N3G - Power-Transistor

IPB031NE7N3G Features

* Optimized technology for synchronous rectification

* Ideal for high frequency switching and DC/DC converters

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance RDS(on)

* N-channel, normal level

* 100% avalanche tested

Datasheet Details

IPB031NE7N3G

Infineon ↗ Technologies AG

245.16 KB

Power-transistor.

IPB031NE7N3G Distributor

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