Datasheet Details
- Part number
- IPB031NE7N3G
- Manufacturer
- Infineon ↗ Technologies AG
- File Size
- 245.16 KB
- Datasheet
- IPB031NE7N3G_InfineonTechnologiesAG.pdf
- Description
- Power-Transistor
IPB031NE7N3G Description
IPB031NE7N3 G OptiMOSTM3 Power-Transistor .
IPB031NE7N3G Features
* Optimized technology for synchronous rectification
* Ideal for high frequency switching and DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
IPB031NE7N3G Applications
* Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G
Product Summary V DS R DS(on),max ID 75 3.1 100 V mΩ A
Package Marking
PG-TO263-3 031NE7N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C
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