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IPB031NE7N3G Power-Transistor

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Description

IPB031NE7N3 G OptiMOSTM3 Power-Transistor .

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Features

* Optimized technology for synchronous rectification
* Ideal for high frequency switching and DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested

Applications

* Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G Product Summary V DS R DS(on),max ID 75 3.1 100 V mΩ A Package Marking PG-TO263-3 031NE7N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C

IPB031NE7N3G Distributors

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