IPB031NE7N3G Datasheet - Infineon Technologies AG

Power-Transistor

* Optimized technology for synchronous rectification

* Ideal for high frequency switching and DC/DC converters

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance RDS(on)

* N-channel, normal level

* 100% avalanche tested

IPB031NE7N3G

Infineon ↗ Technologies AG

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Power-transistor.

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IPB031NE7N3G Power-Transistor Infineon Technologies AG

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