IPB038N12N3
873.00kb
Power transistor.
TAGS
📁 Related Datasheet
IPB038N12N3G - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB038N12N3G
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.
IPB038N12N3G - Power-Transistor
(Infineon Technologies AG)
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPB031N08N5 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB031N08N5
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB031N08N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª5 Power-Transistor, 80 V IPB031N08N5
Data Sheet
Rev. 2.0 Final
Power Manage.
IPB031NE7N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB031NE7N3 - Power Transistor
(Infineon)
OptiMOSTM3 Power-Transistor
Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • .
IPB031NE7N3G - Power-Transistor
(Infineon Technologies AG)
IPB031NE7N3 G
OptiMOSTM3 Power-Transistor
Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/D.
IPB033N10N5LF - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB033N10N5LF
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.
IPB034N03L - Power-Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters • Qualified according to JEDE.
IPB034N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current :ID= 80A@ TC=25℃ ·Drain Source Voltage
: VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.