Description
IPB036N12N3 G OptiMOS™3 Power-Transistor .
Features
* Ideal for high frequency switching and DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
Product Summary V DS R DS(on),max ID
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; Ro
Applications
* Halogen-free according to IEC61249-2-21
120 V 3.6 mΩ 180 A
Type
IPB036N12N3 G
Package Marking
PG-TO263-7 036N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I
