IPB036N12N3 Datasheet, Transistor, Infineon

IPB036N12N3 Features

  • Transistor
  • Ideal for high frequency switching and DC/DC converters
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance RDS(on) Product Summary V DS

PDF File Details

Part number:

IPB036N12N3

Manufacturer:

Infineon ↗

File Size:

266.72kb

Download:

📄 Datasheet

Description:

Power transistor.

Datasheet Preview: IPB036N12N3 📥 Download PDF (266.72kb)
Page 2 of IPB036N12N3 Page 3 of IPB036N12N3

IPB036N12N3 Application

  • Applications
  • Halogen-free according to IEC61249-2-21 120 V 3.6 mΩ 180 A Type IPB036N12N3 G Package Marking PG-TO263-7 036N12N Maxim

TAGS

IPB036N12N3
Power
Transistor
Infineon

📁 Related Datasheet

IPB036N12N3G - Power-Transistor (Infineon Technologies AG)
IPB036N12N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) produc.

IPB031N08N5 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB031N08N5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .

IPB031N08N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPB031N08N5 Data Sheet Rev. 2.0 Final Power Manage.

IPB031NE7N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IPB031NE7N3 - Power Transistor (Infineon)
OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • .

IPB031NE7N3G - Power-Transistor (Infineon Technologies AG)
IPB031NE7N3 G OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/D.

IPB033N10N5LF - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB033N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc.

IPB034N03L - Power-Transistor (Infineon)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDE.

IPB034N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.

IPB034N03LG - OptiMOS3 Power-Transistor (Infineon Technologies AG)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDE.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 120V 180A TO263-7
DigiKey
IPB036N12N3GATMA1
1563 In Stock
Qty : 500 units
Unit Price : $3.32
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts