IPB036N12N3 - Power Transistor

This page provides the datasheet information for the IPB036N12N3, a member of the IPB036N12N3G Power Transistor family.

Datasheet Summary

Features

Ideal for high frequency switching and DC/DC converters.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance RDS(on) Product Summary V DS R DS(on),max ID.
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB036N12N3
Manufacturer	Infineon
File Size	266.72 KB
Description	Power Transistor
Datasheet	IPB036N12N3 Datasheet
Additional preview pages of the IPB036N12N3 datasheet.

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Full PDF Text Transcription

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IPB036N12N3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) Product Summary V DS R DS(on),max ID • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 120 V 3.

Published: Oct 2, 2020 |