IPD60R400CE Datasheet, Mosfet, Infineon Technologies

IPD60R400CE Features

• Mosfet
• Extremely low losses due to very low FOM Rdson
• Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Pb-free plating, Halogen fr

PDF File Details

Part number:

IPD60R400CE

Manufacturer:

Infineon ↗ Technologies

File Size:

1.31MB

Download:

📄 Datasheet

Description:

Mosfet.

IPD60R400CE Application

• Applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switchin

TAGS

IPD60R400CE

Infineon Technologies

📁 Related Datasheet

IPD60R400CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanch.

IPD60R450E6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.2 Final Powe.

IPD60R450E6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.45Ω ·Enhancement mode: ·100% avalanc.

IPD60R460CE - MOSFET (Infineon Technologies)
IPD60R460CE, IPA60R460CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD60R460CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.46Ω ·Enhancement mode: ·100% avalanc.

IPD60R170CFD7 - MOSFET (Infineon)
IPD60R170CFD7 MOSFET 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD60R170CFD7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% ava.

IPD60R180C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPD60R180C7 Data Sheet Rev. 2.0 Final Power Man.

IPD60R180C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R180C7，IIPD60R180C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avalanc.

IPD60R180CM8 - MOSFET (Infineon)
IPD60R180CM8 MOSFET 600V CoolMOSª CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSF.