IPI06CNE8NG
Infineon ↗ Technologies
495.63kb
Power-transistor.
TAGS
📁 Related Datasheet
IPI06CN10NG - Power-Transistor
(Infineon Technologies)
..
IPB06CN10N G
IPI06CN10N G IPP06CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x .
IPI06N03LA - OptiMOS 2 Power-Transistor
(Infineon Technologies AG)
IPB06N03LA IPI06N03LA, IPP06N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle.
IPI020N06N - Power Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPI023NE7N3G - Power-Transistor
(Infineon)
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 7I 6? BCI>3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .
IPI024N06N3 - Power Transistor
(Infineon)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q .
IPI024N06N3G - Power-Transistor
(Infineon Technologies)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q .
IPI029N06N - Power Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPI030N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI030N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3mΩ ·Enhancement mode ·Fas.
IPI030N10N3 - Power Transistor
(Infineon)
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPI030N10N3G - Power Transistor
(Infineon Technologies)
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.