IPI030N10N3G
Infineon ↗ Technologies
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Power transistor.
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IPI030N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI030N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3mΩ ·Enhancement mode ·Fas.
IPI030N10N3 - Power Transistor
(Infineon)
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPI032N06N3 - Power Transistor
(Infineon)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q .
IPI032N06N3G - Power-Transistor
(Infineon Technologies)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q .
IPI034NE7N3G - Power-Transistor
(Infineon)
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 7I 6? BCI>3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .
IPI037N06L3 - Power-Transistor
(Infineon)
Jf]R
%&$ #™3 Power-Transistor
Features
R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J 7@C 4@? G6CE6CD R.
IPI037N06L3G - Power Transistor
(Infineon)
Jf]R
%&$ #™3 Power-Transistor
Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J 7@C 4@? G6CE6CD R .
IPI037N08N3 - Power Transistor
(Infineon)
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c.
IPI037N08N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPI037N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.75mΩ ·Enhancement mode ·.
IPI037N08N3G - Power-Transistor
(Infineon Technologies)
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c.