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IPI045N10N3G Power-Transistor

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Description

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor .

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Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V 4.2 mW 100 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qual

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