IPI045N10N3G Datasheet - Infineon Technologies

IPI045N10N3G - Power-Transistor

IPI045N10N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V 4.2 mW 100 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qual

Datasheet Details

IPI045N10N3G

Infineon ↗ Technologies

521.61 KB

Power-transistor.

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