IPI045N10N3G - Power-Transistor

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V 4.2 mW 100 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	IPI045N10N3G
Manufacturer	Infineon Technologies
File Size	521.61 KB
Description	Power-Transistor
Datasheet	IPI045N10N3G Datasheet
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Full PDF Text Transcription

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IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V 4.

Published: Nov 13, 2015 |