IPI045N10N3G Datasheet, Power-transistor, Infineon Technologies

IPI045N10N3G Features

  • Power-transistor
  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V

PDF File Details

Part number:

IPI045N10N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

521.61kb

Download:

📄 Datasheet

Description:

Power-transistor.

Datasheet Preview: IPI045N10N3G 📥 Download PDF (521.61kb)
Page 2 of IPI045N10N3G Page 3 of IPI045N10N3G

TAGS

IPI045N10N3G
Power-Transistor
Infineon Technologies

📁 Related Datasheet

IPI040N06N3 - Power Transistor (Infineon)
Type OptiMOS™3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very lo.

IPI040N06N3G - Power-Transistor (Infineon Technologies AG)
Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent g.

IPI041N12N3 - Power Transistor (Infineon)
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPI041N12N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .

IPI041N12N3G - Power-Transistor (Infineon Technologies AG)
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPI04CN10N - Power-Transistor (Infineon)
IPB04CN10N G IPI04CN10N G IPP04CN10N G %&$ #™2 Power-Transistor Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I \[# AC@ 5F4E ) '.

IPI04CN10N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor NCHANGE Semicon Iductor IPI04CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.9mΩ ·Enhancement mode ·F.

IPI04CN10NG - Power-Transistor (Infineon)
IPB04CN10N G IPI04CN10N G IPP04CN10N G %&$ #™2 Power-Transistor Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I \[# AC@ 5F4E ) '.

IPI04N03LA - OptiMOS 2 Power-Transistor (Infineon Technologies AG)
IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle.

IPI020N06N - Power Transistor (Infineon Technologies)
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 100V 100A TO262-3
DigiKey
IPI045N10N3GXKSA1
796 In Stock
Qty : 1000 units
Unit Price : $1.43
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts