IPI041N12N3

Power Transistor

Infineon

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant, halogen free

* Qualified

IPI041N12N3

873.00 KB

Power transistor.

📁 Related Datasheet

IPI041N12N3 N-Channel MOSFET (INCHANGE)

IPI041N12N3G Power-Transistor (Infineon Technologies AG)

IPI040N06N3 Power Transistor (Infineon)

IPI040N06N3G Power-Transistor (Infineon Technologies AG)

IPI045N10N3G Power-Transistor (Infineon Technologies)

IPI04CN10N Power-Transistor (Infineon)

IPI04CN10N N-Channel MOSFET (INCHANGE)

IPI04CN10NG Power-Transistor (Infineon)

IPI04N03LA OptiMOS 2 Power-Transistor (Infineon Technologies AG)

IPI020N06N Power Transistor (Infineon Technologies)

TAGS

IPI041N12N3 Power Transistor Infineon

Image Gallery