IPI041N12N3
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Power transistor.
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IPI041N12N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IPI041N12N3G - Power-Transistor
(Infineon Technologies AG)
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPI040N06N3 - Power Transistor
(Infineon)
Type
OptiMOS™3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very lo.
IPI040N06N3G - Power-Transistor
(Infineon Technologies AG)
Type
IPB037N06N3 G
™
IPI040N06N3 G IPP040N06N3 G
OptiMOS 3 Power-Transistor
Features • for sync. rectification, drives and dc/dc SMPS • Excellent g.
IPI045N10N3G - Power-Transistor
(Infineon Technologies)
IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (F.
IPI04CN10N - Power-Transistor
(Infineon)
IPB04CN10N G IPI04CN10N G IPP04CN10N G
%&$ #™2 Power-Transistor
Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I \[# AC@ 5F4E ) '.
IPI04CN10N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
NCHANGE Semicon Iductor
IPI04CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.9mΩ ·Enhancement mode ·F.
IPI04CN10NG - Power-Transistor
(Infineon)
IPB04CN10N G IPI04CN10N G IPP04CN10N G
%&$ #™2 Power-Transistor
Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I \[# AC@ 5F4E ) '.
IPI04N03LA - OptiMOS 2 Power-Transistor
(Infineon Technologies AG)
IPB04N03LA IPI04N03LA, IPP04N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle.
IPI020N06N - Power Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .