IPP070N06NG Datasheet, Power-transistor, Infineon Technologies

IPP070N06NG Features

• Power-transistor
• Low gate charge for fast switching applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-fr

PDF File Details

Part number:

IPP070N06NG

Manufacturer:

Infineon ↗ Technologies

File Size:

481.18kb

Download:

📄 Datasheet

Description:

Power-transistor.

IPP070N06NG Application

• Applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead

TAGS

IPP070N06NG

Infineon Technologies

📁 Related Datasheet

IPP070N06LG - Power-Transistor (Infineon Technologies)
.. IPB070N06L G IPP070N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel.

IPP070N08N3 - Power-Transistor (Infineon)
%&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<.

IPP070N08N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP070N08N3,IIPP070N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.7mΩ ·Enhancement mode ·Fast Switch.

IPP070N08N3G - Power-Transistor (Infineon)
%&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q H3 5<.

IPP072N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP072N10N3，IIPP072N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.2mΩ ·Enhanc.

IPP072N10N3 - Power Transistor (Infineon)
IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.

IPP072N10N3G - Power Transistor (Infineon)
IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.

IPP073N13NM6 - MOSFET (Infineon)
IPP073N13NM6 MOSFET OptiMOSTM 6 Power-Transistor, 135 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.

IPP075N15N3 - Power-Transistor (Infineon)
IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D .

IPP075N15N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP075N15N3，IIPP075N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.5mΩ ·Enhancement mode ·Fast Switchi.