IPP032N06N3G
Infineon ↗ Technologies
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Power-transistor.
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IPP032N06N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP032N06N3,IIPP032N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤2.9mΩ ·Enhanc.
IPP032N06N3 - Power Transistor
(Infineon)
Ie\Q
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q .
IPP030N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP030N10N3,IIPP030N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3mΩ ·Enhancem.
IPP030N10N3 - Power Transistor
(Infineon)
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPP030N10N3G - Power Transistor
(Infineon Technologies)
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPP030N10N5 - MOSFET
(Infineon)
IPP030N10N5
MOSFET
OptiMOSª5 Power-Transistor, 100 V
Features
• Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.
IPP030N10N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP030N10N5,IIPP030N10N5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.0mΩ ·Enhanc.
IPP033N03LF2S - MOSFET
(Infineon)
Public
IPP033N03LF2S Final datasheet
MOSFET
StrongIRFET™ 2 Power‑Transistor, 30 V
Features
• Optimized for a wide range of applications • N‑channel,.
IPP034N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP034N03L,IIPP034N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.4mΩ ·Enhancem.
IPP034N03L - Power-Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters • Qualified according to JEDE.