INCHANGE manufacturer logo and representative part image Part number: IPP030N10N3 Manufacturer: INCHANGE File Size: 241.07kb Download: 📄 Datasheet Description: N-channel mosfet.
IPP030N10N3 - Power Transistor (Infineon) IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPP030N10N3G - Power Transistor (Infineon Technologies) IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPP030N10N5 - MOSFET (Infineon) IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.
IPP030N10N5 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N5，IIPP030N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.0mΩ ·Enhanc.
IPP032N06N3 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP032N06N3，IIPP032N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.9mΩ ·Enhanc.
IPP032N06N3 - Power Transistor (Infineon) Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .
IPP032N06N3G - Power-Transistor (Infineon Technologies) Ie\Q %&$ #™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? F5BD5BC Q .
IPP033N03LF2S - MOSFET (Infineon) Public IPP033N03LF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel,.
IPP034N03L - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP034N03L，IIPP034N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancem.
IPP034N03L - Power-Transistor (Infineon) Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDE.
