IPP039N10N5 - N-Channel MOSFET

INCHANGE

IPP039N10N5 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP039N10N5，IIPP039N10N5 *.

IPP039N10N5 Features

* Static drain-source on-resistance: RDS(on) ≤3.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP039N10N5 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 188 Tj Max. Operating Junction Temperature 175 Tstg Storage

📥 Download Datasheet

IPP039N10N5 Datasheet Preview — Preview of IPP039N10N5 PDF

Datasheet Details

Part number: IPP039N10N5
Manufacturer: INCHANGE
File Size: 242.07 KB
Datasheet: IPP039N10N5-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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