IPP032N06N3 - N-Channel MOSFET

INCHANGE

IPP032N06N3 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP032N06N3，IIPP032N06N3 *.

IPP032N06N3 Features

* Static drain-source on-resistance: RDS(on) ≤2.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP032N06N3 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 188 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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IPP032N06N3 Datasheet Preview — Preview of IPP032N06N3 PDF

Datasheet Details

Part number: IPP032N06N3
Manufacturer: INCHANGE
File Size: 241.96 KB
Datasheet: IPP032N06N3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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