IPP032N06N3 Datasheet - INCHANGE

IPP032N06N3, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP032N06N3，IIPP032N06N3 *.

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IPP032N06N3-INCHANGE.pdf

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Datasheet Details

Part number:

IPP032N06N3

Manufacturer:

INCHANGE

File Size:

241.96 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤2.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 188 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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IPP032N06N3 N-Channel MOSFET INCHANGE

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