IPP037N08N3G Datasheet, Power-transistor, Infineon Technologies

IPP037N08N3G Features

• Power-transistor
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very l

PDF File Details

Part number:

IPP037N08N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

498.48kb

Download:

📄 Datasheet

Description:

Power-transistor.

IPP037N08N3G Application

• Applications
• Halogen-free according to IEC61249-2-21 IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Product Summary V DS R DS(on),max ID 80

TAGS

IPP037N08N3G

Infineon Technologies

📁 Related Datasheet

IPP037N08N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP037N08N3，IIPP037N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.75mΩ ·Enhan.

IPP037N08N3 - Power Transistor (Infineon)
OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c.

IPP037N06L3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP037N06L3，IIPP037N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhanc.

IPP037N06L3 - Power-Transistor (Infineon)
Jf]R %&$ #™3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J 7@C  4@? G6CE6CD R.

IPP037N06L3G - Power Transistor (Infineon)
Jf]R %&$ #™3 Power-Transistor Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J 7@C  4@? G6CE6CD R .

IPP030N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N3，IIPP030N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancem.

IPP030N10N3 - Power Transistor (Infineon)
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.

IPP030N10N3G - Power Transistor (Infineon Technologies)
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.

IPP030N10N5 - MOSFET (Infineon)
IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.

IPP030N10N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N5，IIPP030N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.0mΩ ·Enhanc.