IPP037N06L3G
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Power transistor.
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IPP037N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP037N06L3，IIPP037N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.4mΩ ·Enhanc.
IPP037N06L3 - Power-Transistor
(Infineon)
Jf]R
%&$ #™3 Power-Transistor
Features
R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J 7@C 4@? G6CE6CD R.
IPP037N08N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP037N08N3，IIPP037N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.75mΩ ·Enhan.
IPP037N08N3 - Power Transistor
(Infineon)
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c.
IPP037N08N3G - Power-Transistor
(Infineon Technologies)
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c.
IPP030N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP030N10N3，IIPP030N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3mΩ ·Enhancem.
IPP030N10N3 - Power Transistor
(Infineon)
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPP030N10N3G - Power Transistor
(Infineon Technologies)
IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.
IPP030N10N5 - MOSFET
(Infineon)
IPP030N10N5
MOSFET
OptiMOSª5 Power-Transistor, 100 V
Features
• Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.
IPP030N10N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP030N10N5，IIPP030N10N5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.0mΩ ·Enhanc.
