IPP076N12N3 - Power-Transistor
IPP076N12N3 Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; halogen free
