Datasheet Details
- Part number
- IPP015N04N
- Manufacturer
- INCHANGE
- File Size
- 240.69 KB
- Datasheet
- IPP015N04N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPP015N04N Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP015N04N，IIPP015N04N *.
IPP015N04N Features
* Static drain-source on-resistance:
RDS(on) ≤1.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPP015N04N Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
400
PD
Total Dissipation @TC=25℃
250
Tj
Max. Operating Junction Temperature
175
Tstg
Storage T
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