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IPP023NE7N3 - N-Channel MOSFET

IPP023NE7N3 Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3,IIPP023NE7N3 *.

IPP023NE7N3 Features

* Static drain-source on-resistance: RDS(on) ≤2.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP023NE7N3 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IPP023NE7N3
Manufacturer
INCHANGE
File Size
241.55 KB
Datasheet
IPP023NE7N3-INCHANGE.pdf
Description
N-Channel MOSFET

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