Datasheet Details
- Part number
- IPP023NE7N3
- Manufacturer
- INCHANGE
- File Size
- 241.55 KB
- Datasheet
- IPP023NE7N3-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPP023NE7N3 Description
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3，IIPP023NE7N3 *.
IPP023NE7N3 Features
* Static drain-source on-resistance:
RDS(on) ≤2.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPP023NE7N3 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
480
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage T
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