IPP023NE7N3 N-Channel MOSFET

INCHANGE

Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3，IIPP023NE7N3 *.

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Datasheet Specifications

Part number: IPP023NE7N3
Manufacturer: INCHANGE
File Size: 241.55 KB
Datasheet: IPP023NE7N3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤2.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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N-Channel MOSFET INCHANGE

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