IPP023N08N5
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IPP023N03LF2S - MOSFET
(Infineon)
Public
IPP023N03LF2S Final datasheet
MOSFET
StrongIRFET™ 2 Power‑Transistor, 30 V
Features
• Optimized for a wide range of applications • N‑channel,.
IPP023N04N - Power Transistor
(Infineon)
Ie]R
%&$ #™3 Power-Transistor
Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD.
IPP023N04N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching.
IPP023N04NG - Power-Transistor
(Infineon Technologies)
Ie]R
%&$ #™3 Power-Transistor
Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD.
IPP023N10N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª5 Power-Transistor, 100 V IPP023N10N5
Data Sheet
Rev. 2.1 Final
Power Manag.
IPP023NE7N3 - N-Channel MOSFET
(INCHANGE)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPP023NE7N3,IIPP023NE7N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤2.3mΩ ·Enhance.
IPP023NE7N3G - Power-Transistor
(Infineon)
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 7I 6? BCI>3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .
IPP020N03LF2S - MOSFET
(Infineon)
Public
IPP020N03LF2S Final datasheet
MOSFET
StrongIRFET™2 Power‑Transistor, 30 V
Features
• Optimized for a wide range of applications • N‑channel, .
IPP020N06N - Power-Transistor
(Infineon)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPP020N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP020N06N,IIPP020N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤2.0mΩ ·Enhancem.