IPP023N10N5 - MOSFET

Infineon

IPP023N10N5 Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPP023N10N5 Data Sheet Rev.2.1 Final Power Manag.
Features. N-channel, normal level. Optimized for FOMOSS. Very low on-resistance RDS(on). 175 °C operating temperat.

IPP023N10N5 Features

* N-channel, normal level
* Optimized for FOMOSS
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

📥 Download Datasheet

IPP023N10N5 Datasheet Preview — Preview of IPP023N10N5 PDF

Datasheet Details

Part number: IPP023N10N5
Manufacturer: Infineon ↗
File Size: 1.29 MB
Datasheet: IPP023N10N5-Infineon.pdf
Description: MOSFET

📁 Related Datasheet

IPP023N04NG - Power-Transistor (Infineon Technologies)
IPP023NE7N3 - N-Channel MOSFET (INCHANGE)
IPP024N06N3 - N-Channel MOSFET (INCHANGE)
IPP024N06N3G - Power-Transistor (Infineon Technologies)
IPP029N06N - N-Channel MOSFET (INCHANGE)
IPP015N04N - N-Channel MOSFET (INCHANGE)
IPP030N10N3 - N-Channel MOSFET (INCHANGE)
IPP030N10N3G - Power Transistor (Infineon Technologies)

📌 All Tags

MOSFET Infineon

Infineon IPP023N10N5-like datasheet

IPP023N03LF2S - MOSFET
IPP023N04N - Power Transistor
IPP023N08N5 - MOSFET
IPP023NE7N3G - Power-Transistor
IPP020N03LF2S - MOSFET
IPP020N06N - Power-Transistor

IPP023N10N5 Stock/Price