* N-channel, normal level
* Optimized for FOMOSS
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for target application
* Ideal for high-frequency switchin
IPP023N10N5 Datasheet (1.29 MB)
IPP023N10N5
1.29 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª5 Power-Transistor, 100 V IPP023N10N5
Data Sheet
Rev. 2.1 Final
Power Manag.
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