IPP023N10N5 MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPP023N10N5 Data Sheet Rev.2.1 Final Power Manag.
Features. N-channel, normal level. Optimized for FOMOSS. Very low on-resistance RDS(on). 175 °C operating temperat.

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Datasheet Specifications

Part number: IPP023N10N5
Manufacturer: Infineon ↗
File Size: 1.29 MB
Datasheet: IPP023N10N5-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Optimized for FOMOSS
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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IPP023N10N5 MOSFET Infineon

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