IPP023N10N5 Datasheet - Infineon

IPP023N10N5, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPP023N10N5 Data Sheet Rev.2.1 Final Power Manag.
Features. N-channel, normal level. Optimized for FOMOSS. Very low on-resistance RDS(on). 175 °C operating temperat.

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Datasheet Details

Part number:

IPP023N10N5

Manufacturer:

Infineon ↗

File Size:

1.29 MB

Description:

MOSFET

Features

* N-channel, normal level
* Optimized for FOMOSS
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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IPP023N10N5 MOSFET Infineon

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