Datasheet Details
- Part number
- IPP023N10N5
- Manufacturer
- Infineon ↗
- File Size
- 1.29 MB
- Datasheet
- IPP023N10N5-Infineon.pdf
- Description
- MOSFET
IPP023N10N5 Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPP023N10N5 Data Sheet Rev.2.1 Final Power Manag.
Features.
N-channel, normal level.
Optimized for FOMOSS.
Very low on-resistance RDS(on).
175 °C operating temperat.
IPP023N10N5 Features
* N-channel, normal level
* Optimized for FOMOSS
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
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