INCHANGE manufacturer logo and representative part image Part number: IPP023N04N Manufacturer: INCHANGE File Size: 241.18kb Download: 📄 Datasheet Description: N-channel mosfet.
IPP023N04N - Power Transistor (Infineon) Ie]R %&$ #™3 Power-Transistor Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD.
IPP023N04NG - Power-Transistor (Infineon Technologies) Ie]R %&$ #™3 Power-Transistor Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD.
IPP023N03LF2S - MOSFET (Infineon) Public IPP023N03LF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel,.
IPP023N08N5 - MOSFET (Infineon) MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPP023N08N5 Data Sheet Rev. 2.0 Final Power Manage.
IPP023N10N5 - MOSFET (Infineon) MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPP023N10N5 Data Sheet Rev. 2.1 Final Power Manag.
IPP023NE7N3 - N-Channel MOSFET (INCHANGE) INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3，IIPP023NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhance.
IPP023NE7N3G - Power-Transistor (Infineon) %&$ #B< # : A 0<& <,9=4=>: < 6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .
IPP020N03LF2S - MOSFET (Infineon) Public IPP020N03LF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 30 V Features • Optimized for a wide range of applications • N‑channel, .
IPP020N06N - Power-Transistor (Infineon) Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPP020N06N - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP020N06N，IIPP020N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancem.
