IPP65R660CFDA
Infineon ↗ Technologies
2.23MB
Cfda power transistor. CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pio
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IPP65R660CFD - Power Transistor
(Infineon Technologies)
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IPP65R660CFD - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP65R660CFD,IIPP65R660CFD
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.66Ω ·Enhancement mode ·Fast Switc.
IPP65R600C6 - Power Transistor
(Infineon Technologies)
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IPP65R600C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP65R600C6,IIPP65R600C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.
IPP65R600E6 - MOSFET
(Infineon Technologies)
MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOSTM E6 Power Transistor IPx65R600E6
Data Sheet
Rev. 2.2, 2016-08-04
Po.
IPP65R600E6 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IPP65R600E6,IIPP65R600E6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.
IPP65R045C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
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Data Sheet
Rev. 2.0 Final
Power Man.
IPP65R045C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP65R045C7,IIPP65R045C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.045Ω ·Enhancement mode ·Fast Switc.
IPP65R065C7 - MOSFET
(Infineon)
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IPP65R065C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP65R065C7,IIPP65R065C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.065Ω ·Enhancement mode ·Fast Switc.