K50H603 Datasheet - Infineon Technologies

K50H603 IGBT

K50H603 Features

* C TRENCHSTOPTM technology offering

* very low VCEsat

* low EMI

* Very soft, fast recovery anti-parallel diode

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

* Pb-free lead plating; RoHS compliant

Datasheet Details

K50H603

Infineon ↗ Technologies

2.07 MB

Igbt.

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K50H603 K50H603 IGBT Infineon Technologies

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