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K50H603 Datasheet - Infineon Technologies

IGBT

K50H603 Features

* C TRENCHSTOPTM technology offering

* very low VCEsat

* low EMI

* Very soft, fast recovery anti-parallel diode

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

* Pb-free lead plating; RoHS compliant

K50H603 Datasheet (2.07 MB)

Preview of K50H603 PDF

Datasheet Details

Part number:

K50H603

Manufacturer:

Infineon ↗ Technologies

File Size:

2.07 MB

Description:

Igbt.
IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser.

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K50H603 IGBT Infineon Technologies

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