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SIGC109T120R3 Datasheet - Infineon Technologies

IGBT

SIGC109T120R3 Features

* 1200V Trench + Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling 3 This chip is used for:

* power module C Applications:

* drives G E Chip Type SIGC109T120R3 VCE IC

SIGC109T120R3 General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights .

SIGC109T120R3 Datasheet (104.49 KB)

Preview of SIGC109T120R3 PDF

Datasheet Details

Part number:

SIGC109T120R3

Manufacturer:

Infineon ↗ Technologies

File Size:

104.49 KB

Description:

Igbt.

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