SIGC109T120R3 IGBT

Infineon Technologies

SIGC109T120R3 Description

www.DataSheet4U.com Preliminary SIGC109T120R3 IGBT Chip .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prü.

SIGC109T120R3 Features

* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling 3 This chip is used for:

SIGC109T120R3 Applications

* drives G E Chip Type SIGC109T120R3 VCE ICn Die Size 10.47 x 10.44 mm2 Package sawn on foil Ordering Code Q67050A4108-A001 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per waf

📥 Download Datasheet

SIGC109T120R3 Datasheet Preview — Preview of SIGC109T120R3 PDF

Datasheet Details

Part number: SIGC109T120R3
Manufacturer: Infineon ↗ Technologies
File Size: 104.49 KB
Datasheet: SIGC109T120R3_InfineonTechnologies.pdf
Description: IGBT

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