SIGC109T120R3L Datasheet - Infineon Technologies

SIGC109T120R3L, IGBT

www.DataSheet4U.com SIGC109T120R3L IGBT Chip .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prü.

Features

* 1200V Trench + Field Stop technology
* 120µm chip
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling 3 This chip is used for:

Applications

* drives G E Chip Type SIGC109T120R3L VCE ICn Die Size 10.47 x 10.44 mm2 Package sawn on foil Ordering Code Q67050A4210-A101 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.

SIGC109T120R3L_InfineonTechnologies.pdf