SIGC109T120R3L Datasheet (Infineon Technologies)

SIGC109T120R3L, IGBT

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

SIGC109T120R3L Features

* 1200V Trench + Field Stop technology

* 120µm chip

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling 3 This chip is used for:

* power module C Applications:

* drives G E Chip Type S