SIGC101T170R3E IGBT

Infineon

SIGC101T170R3E Description

SIGC101T170R3E IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

SIGC101T170R3E Features

* 1700V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

SIGC101T170R3E Applications

* drives Chip Type VCE IC Die Size SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside

📥 Download Datasheet

SIGC101T170R3E Datasheet Preview — Preview of SIGC101T170R3E PDF

Datasheet Details

Part number: SIGC101T170R3E
Manufacturer: Infineon ↗
File Size: 168.97 KB
Datasheet: SIGC101T170R3E-Infineon.pdf
Description: IGBT

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IGBT Infineon

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