SIGC101T170R3E Datasheet - Infineon

SIGC101T170R3E IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic type L7777M, L7777T, L7777E; new gate pad desi.

SIGC101T170R3E Features

* 1700V Trench & Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power modules Applications:

* drives Chip Type VCE IC Die Size SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm

SIGC101T170R3E-Infineon.pdf