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SPD30P06P Power Transistor

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Description

SPD30P06P G SIPMOS® Power-Transistor .

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Features

* Product Summary
* P-Channel
* Enhancement mode
* Avalanche rated
* dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A
* 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Quali

SPD30P06P Distributors

📁 Related Datasheet

SPD30P06PG SPD30N03L SPD30N03S2L SPD30N03S2L-20G SPD3126 SPD3126SMS

📌 All Tags

SPD30P06P Power Transistor Infineon Technologies
Infineon Technologies SPD30P06P-like datasheet
SPD30N03
SPD30N03S2L-07
SPD30N03S2L-07G
SPD30N03S2L-10
SPD30N03S2L-10G