SPD30P06PG - Power Transistor

This page provides the datasheet information for the SPD30P06PG, a member of the SPD30P06P Power Transistor family.

Datasheet Summary

Features

Product Summary.
P-Channel.
Enhancement mode.
Avalanche rated.
dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A.
175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AEC Q101 Type SPD30P06P G Package PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed d.

Infineon

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Datasheet Details

Part number	SPD30P06PG
Manufacturer	Infineon
File Size	500.83 KB
Description	Power Transistor
Datasheet	SPD30P06PG Datasheet
Additional preview pages of the SPD30P06PG datasheet.

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Full PDF Text Transcription

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SPD30P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.

Published: Dec 3, 2020 |