Datasheet4U Logo Datasheet4U.com

SPD30N03S2L - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤10mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPD30N03S2L-07 Power-Transistor Infineon Technologies
SPD30N03S2L-07G Power-Transistor Infineon Technologies
SPD30N03S2L-10 Power-Transistor Infineon Technologies
SPD30N03S2L-10G Power-Transistor Infineon Technologies
SPD30N03S2L-20 Power-Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
SPD30P06P P-Channel MOSFET
SPD02N50C3 N-Channel MOSFET
SPD02N60C3 N-Channel MOSFET
SPD02N60S5 N-Channel MOSFET
SPD02N80C3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.