• Part: SPD30N03S2L-07
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 584.52 KB
Download SPD30N03S2L-07 Datasheet PDF
Infineon
SPD30N03S2L-07
SPD30N03S2L-07 is Power-Transistor manufactured by Infineon.
Feature - N-Channel - Enhancement mode - Logic Level - Excellent Gate Charge x RDS(on) product (FOM) - Superior thermal resistance - 175°C operating temperature - Avalanche rated - dv/dt rated . ° Pb-free lead plating; Ro HS pliant SPD30N03S2L-07 G Product Summary 30 V RDS(on) 6.7 mΩ 30 A PG-TO252-3 Type Package Marking SPD30N03S2L-07G PG-TO252-3 2N03L07 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID...