SPD30N03S2L-07G
SPD30N03S2L-07G is Power-Transistor manufactured by Infineon.
Feature
- N-Channel
- Enhancement mode
- Logic Level
- Excellent Gate Charge x RDS(on) product (FOM)
- Superior thermal resistance
- 175°C operating temperature
- Avalanche rated
- dv/dt rated ° Pb-f.ree lead plating; Ro HS pliant
SPD30N03S2L-07 G
Product Summary
VDS 30 V
RDS(on) 6.7
ID 30
PG-TO252-3 mΩ A
Type
Package
Marking
SPD30N03S2L-07G PG-TO252-3
2N03L07
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID puls
EAR dv/dt
VGS Ptot
Tj ,...