007N06N Power Transistor

Infineon

Description

IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V .

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Datasheet Specifications

Part number: 007N06N
Manufacturer: Infineon ↗
File Size: 639.43 KB
Datasheet: 007N06N-Infineon.pdf
Description: Power Transistor

Features

* 100% avalanche tested
* Superior thermal resistance
* N-channel

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 0.75 mΩ ID 486 A Qoss 227 nC QG(0V. .10V) 216

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007N06N Power Transistor Infineon

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