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2ED21814S06J

650V high-side and low-side gate driver

2ED21814S06J Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

* Negative VS transient immunity of 100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) upto + 650 V

* Maximum bootstrap voltage (VB node) of + 675 V

* Integrated ultra-fast

2ED21814S06J General Description

The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of.

2ED21814S06J Datasheet (1.22 MB)

Preview of 2ED21814S06J PDF

Datasheet Details

Part number:

2ED21814S06J

Manufacturer:

Infineon ↗

File Size:

1.22 MB

Description:

650v high-side and low-side gate driver.

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2ED21814S06J 650V high-side and low-side gate driver Infineon

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