Datasheet Details
Part number:
2ED21814S06J, 2ED2181S06F
Manufacturer:
File Size:
1.22 MB
Description:
650v high-side and low-side gate driver.
Note:
This datasheet PDF includes multiple part numbers: 2ED21814S06J, 2ED2181S06F.
Please refer to the document for exact specifications by model.
2ED21814S06J, 2ED2181S06F, 650V high-side and low-side gate driver
The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of
2ED21814S06J Features
* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
* Integrated ultra-fast
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