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2ED21814S06J, 2ED2181S06F Datasheet - Infineon

2ED21814S06J 650V high-side and low-side gate driver

The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of.

2ED21814S06J Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

* Negative VS transient immunity of 100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) upto + 650 V

* Maximum bootstrap voltage (VB node) of + 675 V

* Integrated ultra-fast

2ED2181S06F-Infineon.pdf

This datasheet PDF includes multiple part numbers: 2ED21814S06J, 2ED2181S06F. Please refer to the document for exact specifications by model.
2ED21814S06J Datasheet Preview Page 2 2ED21814S06J Datasheet Preview Page 3

Datasheet Details

Part number:

2ED21814S06J, 2ED2181S06F

Manufacturer:

Infineon ↗

File Size:

1.22 MB

Description:

650v high-side and low-side gate driver.

Note:

This datasheet PDF includes multiple part numbers: 2ED21814S06J, 2ED2181S06F.
Please refer to the document for exact specifications by model.

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2ED21814S06J 2ED2181S06F 650V high-side and low-side gate driver Infineon

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