Description
2ED2181 (4) S06F (J) 2ED2181 (4) S06F (J) 650 V high-side and low-side gate driver with integrated bootstrap diode .
The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Features
* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
* Integrated ultra-fast
Applications
* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules
* Refrigeration compressors, induction cookers, other majo