2ED21814S06J Datasheet, Driver, Infineon

2ED21814S06J Features

• Driver
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
• Negative VS transient immunity of 100 V
• Floating channel designed for bootstrap operation <

PDF File Details

Part number:

2ED21814S06J

Manufacturer:

Infineon ↗

File Size:

1.22MB

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📄 Datasheet

Description:

650v high-side and low-side gate driver. The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output

2ED21814S06J Application

• Applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as bel

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2ED21814S06J

Infineon

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